| 摘要 |
PROBLEM TO BE SOLVED: To remove efficiently a chemical reaction blocking material which blocks the chemical reaction of a resist that may cause generation of resist poisoning in a semiconductor device having a damascene structure. SOLUTION: The manufacturing method of a semiconductor device includes a process (a) to form an interconnection 11 on a first insulating film 10 formed on a substrate, a process (b) to form a second insulating film 12 on the first insulating film 10 and the interconnection 11, a process (c) to form a third insulating film (14, 15) having an opening to expose the second insulating film 12 on the second insulating film 12, and a process (d) to form a resist pattern on the third insulating film (14, 15). It further includes a process (X) to remove the chemical reaction blocking material of the resist composing the resist pattern generated during the process (b) after the process(b) and before the process (c). COPYRIGHT: (C)2007,JPO&INPIT
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