Polishing method for semiconductor wafer

摘要

A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50-60 wt %/40-50 wt %, a modulus of elasticity of 1.4x10¹⁰ Pa or higher and a particle size of 1 mum or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.