发明名称 |
Integrierte Schaltkreisstruktur mit verbesserter LDMOS-Gestaltung |
摘要 |
A semiconductor integrated circuit including an LDMOS device structure comprises a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region. |
申请公布号 |
DE10393858(T5) |
申请公布日期 |
2007.03.15 |
申请号 |
DE2003193858T |
申请日期 |
2003.12.09 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORP. |
发明人 |
CAI, JUN |
分类号 |
H01L29/78;H01L21/336;H01L29/10;H01L29/45;H01L29/49 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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