| 摘要 |
PROBLEM TO BE SOLVED: To improve crystallinity of a high distorted quantum well structure on an InGaAs substrate and to reduce its heat resistance. SOLUTION: A distorted quantum well structureαis formed on an InGaAs substrate 1. The quantum well layers 4, 6 and 8 of the distorted quantum well structureαare distorted at high compression so that an oscillation wavelength may be a communication band wavelength. To strain-compensate the compression strain, InGaAs/GaAs barrier layers 3, 5, 7 and 9 including a GaAs layer as a tensile strain are stacked and formed among the quantum well layers 4, 6 and 8. Thus, misfit transition or the generation of fault due to strain is reduced. In addition, a GaAs as a binary crystal can reduce heat resistance and suppress an increase in temperature. COPYRIGHT: (C)2007,JPO&INPIT
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