| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device has a first metal pattern made of a first metal formed on a semiconductor substrate, an insulating film formed over the first metal pattern, and a second metal pattern made of a second metal formed on the insulating film. The insulating film has a barrier property for preventing the diffusion of the first metal.
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| 申请公布号 |
US2007057376(A1) |
申请公布日期 |
2007.03.15 |
| 申请号 |
US20060600844 |
申请日期 |
2006.11.17 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HATTORI TSUKASA |
| 分类号 |
H01L23/52;H01L21/768;H01L23/48;H01L23/525;H01L23/532;H01L27/118;H01L29/40 |
主分类号 |
H01L23/52 |
| 代理机构 |
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