| 摘要 |
PROBLEM TO BE SOLVED: To easily set protection voltage even when having a gate insulation film of low breakdown voltage. SOLUTION: The semiconductor device is provided with a MOS transistor 50, and an ESD protection element 2. The MOS transistor 50 is provided with a first gate insulation film 36 provided on the first element area of a semiconductor substrate 30 having first and second element areas of a first conductive type separated from each other, a first gate electrode 38 provided on the first gate insulation film, and first impurity areas 42 of a second conductive type provided in first element areas on both of the sides of the first gate electrode. The ESD protection element 2 is provided with a second gate insulation film 36 provided on the second element area and having substantially the same thickness as the first gate insulation film, a second gate electrode 38 provided on the second gate insulation film and connected with the first gate electrode, and a second impurity areas 42 of the second conductive type provided in second element areas on both of the sides of the second gate electrode. COPYRIGHT: (C)2007,JPO&INPIT |
