| 摘要 |
<p>Provided herein is an MV SRAM device capable of storing multiple value levels using an SET device. The device includes one or more word lines; one or more bitlines; a first transistor having a source connected to a power supply voltage and a gate and a drain connected to the bitlines; and a unit cell connected to intersections of the word lines and the bitlines, wherein the unit cell comprises: a second transistor having a gate connected to the word lines and a drain connected to the bitlines; an SET (single electron transistor) device having a gate connected to the drain of the second transistor and a source connected to the ground voltage; a third transistor connected between the drain of the second transistor and the drain of the SET device, wherein the gate of the third transistor is connected to the ground voltage; and a cell capacitor connected between the drain of the second transistor and the ground voltage. Accordingly, since the MV SRAM device only needs to enable the word lines in order to rewrite the data, thereby requiring only a small amount of current flow, it is suitable for a low-power application.</p> |
