| 摘要 |
PROBLEM TO BE SOLVED: To enable to highly accurately execute composition control of a multiple system film while suppressing temperature rise in film forming. SOLUTION: A target 2, an electrostatic chuck 4 and a crucible 5 are moved to adjust positional relation among the target 2, a semiconductor wafer W and a evaporation source 7. After that, while evacuating the inside of the chamber 1, the evaporation source 7 is heated by a heater 6 so as to carry out the film formation of the semiconductor wafer W by deposition, a sputter gas G1 and a reaction gas G2 are supplied to the chamber 1, and a high-frequency voltage is applied to a target 2. In this way, plasma PZ is generated into the chamber 1, and film forming processing of the semiconductor wafer W is performed by sputtering while performing film forming processing of the wafer W by evaporation. Thus, the multiple system film is formed on the semiconductor wafer W. COPYRIGHT: (C)2007,JPO&INPIT
|
