发明名称 Dynamic random access memory
摘要 The case where a memory cell array comprises 1st, 2nd, . . . 2n-th sub-arrays is considered. In this case, when the refresh mode is started, a refresh counter produces an n-bit sub-array selection address signal for selecting the 1st, 2nd, . . . 2n-th sub-arrays one by one in order and a row address signal for selecting a plurality of rows in each sub-array one by one in order. In case a defective row including a retention-defective memory cell exists in the m-th (wherein m stands for 1, 2, . . . or 2n) sub-array, the conversion of the sub-array selection address signal is performed and such a new sub-array selection address signal as to select the m-th sub-array and the k-th sub-array at the same time is produced when the sub-array selection address signal has selected the k-th (wherein k stands for 1, 2, . . . or 2n, and k NOTEQUAL m) sub-array and the row address signal has become the same as the row address signal for selecting the defective row.
申请公布号 US5991218(A) 申请公布日期 1999.11.23
申请号 US19980116145 申请日期 1998.07.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KUSHIYAMA, NATSUKI
分类号 G11C8/12;G11C11/401;G11C11/406;G11C11/408;G11C29/10;G11C29/26;(IPC1-7):G11C7/00 主分类号 G11C8/12
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