SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To improve the reliability in a semiconductor device including a flash memory having an auxiliary gate electrode structure. SOLUTION: The device includes: a plurality of auxiliary gate electrodes AG which are formed on the main surface of a semiconductor board 1 through a gate insulating film 2; floating gate electrodes FG which are formed to be insulated electrically from the auxiliary gate electrodes AG by side wall insulating films 4 formed on the side walls of the auxiliary gate electrodes AG, and are formed through the gate insulating films 2; and a plurality of control gate electrodes CG which are formed on inter-layer dielectrics 5 formed to cover the floating gate electrodes FG. The surface of the interlayer dielectrics 5 has irregular shape. COPYRIGHT: (C)2007,JPO&INPIT