| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a silicon carbide semiconductor device in which the problems of aggregation of impurities, and the like, are eliminated in a silicon carbide layer, etching of a base contact portion is suppressed in activated annealing, or the like, and low resistivity ohmic contact is established between the source-base common electrode and the base contact portion. SOLUTION: A base contact portion 15 is formed by implanting Al ions at an impurity concentration of 2e20 cm<SP>-3</SP>while holding the substrate temperature between 400-800°C. When ions are implanted while holding the substrate temperature between 400-800°C, crystallinity aggravation of a silicon carbide layer is suppressed when ions are implanted, problems of aggregation of impurities, and the like, are eliminated in a silicon carbide layer and etching of the base contact portion 15 is suppressed in activated annealing, or the like. COPYRIGHT: (C)2007,JPO&INPIT
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