| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of higher output by enhancing th COD level. SOLUTION: The semiconductor laser element 10 comprises a first conductivity type clad layer 2, an active layer 3, and a second conductivity type clad layer 4 formed sequentially on the upper surface S of a first conductivity type semiconductor substrate 1, and a pair of resonator surfaces A1 and A2 wherein free carrier absorption loss is set in the range of 10-13 cm<SP>-1</SP>in the active layer portion forming a part of the pair of resonator surfaces A1 and A2, and the active layer portion Z located in the vicinity of the active layer portion. COPYRIGHT: (C)2007,JPO&INPIT
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