| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor device having a gallium nitride-based semiconductor layer of a good crystal quality. <P>SOLUTION: A semiconductor light emitting device 31 comprises a gallium nitride support substrate 33 having a main face 33a and a gallium nitride-based semiconductor layer 35 such as an n-type GaN layer. The gallium nitride support substrate 33 has the main face 33a and the gallium nitride-based semiconductor layer 35 is provided on this main face 33a. An Angle 2 (hereinafter, referred to as an off-angle) is made between a normal line 33b of the main face 33a and a C axis 33c of the gallium nitride support substrate 33. As the off-angle of the gallium nitride support substrate 33 goes close to zero, a projection in a hexagonal pyramid shape is conspicuous on a surface of the gallium nitride-based semiconductor layer 35. Further, this angle is less than 2°, preferably. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
