METHOD OF MANUFACTURING A STACKED SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a stack type semiconductor device is provided to improve an electrical reliability by preventing the generation of voids using a spacer formed at sidewalls of a second opening of a second insulating pattern. A gate structure(109) is formed on a substrate(100). A first insulating pattern(112) with first openings is formed on the resultant structure. A seed pattern(116) made of single crystal silicon is formed in the first openings. A second insulating pattern(114) with second openings(118) for exposing the first insulating pattern to the outside is formed on the resultant structure. A spacer(122) is formed at sidewalls of each second opening of the second insulating pattern. A single crystal silicon pattern(124) is filled in the second opening.