发明名称 LITHOGRAPHIC METHOD
摘要 <p>A lithographic method is provided to remove the effects due to the cooling of a wafer by acquiring two sets of overlay data from an exposure process using normal and reversed meanders. First test structures of a first set are printed on a first substrate by using a first lithography projection apparatus including a first projection system(S1). Second test structures of a second set are printed on a second substrate by using a second lithography projection apparatus including a second projection system(S3). First position data are measured from the first test structures of the first set(S2). Second position data are measured from the second structures of the second set(S4). Error data of a third set are measured from the first and second position data of the first and second sets(S5). A calibration process is performed on the first and second lithography projection apparatuses by using the error data of the third set(S6).</p>
申请公布号 KR20070027461(A) 申请公布日期 2007.03.09
申请号 KR20060085194 申请日期 2006.09.05
申请人 ASML NETHERLANDS B.V. 发明人 ZAAL KOEN JACOBUS JOHANNES MARIA;DE KORT ANTONIUS JOHANNES;DE JONG FREDERIK EDUARD;GOORMAN KOEN;MENCHTCHIKOV BORIS;PEN HERMEN FOLKEN
分类号 H01L21/027 主分类号 H01L21/027
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