发明名称 NONVOLATILE MEMORY CELL AND STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To store data when powered off by providing an additional circuit in a nonvolatile storage circuit. SOLUTION: The memory cell has: a pair of inverters constituted of a pair of field effect transistors and a pair of nonvolatile variable resistance elements connected to drain terminals of the transistors, and in which an input/output terminal is cross-coupled; and a power source supply line which is connected to the other end of the nonvolatile variable resistance element and to which control voltage is supplied. In the storage device, adjacent data can be stored when a memory cell is turned off by controlling the variable resistance element through the power source supply line. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007059019(A) 申请公布日期 2007.03.08
申请号 JP20050245997 申请日期 2005.08.26
申请人 SONY CORP 发明人 OKAZAKI NOBUMICHI;SHIIMOTO TSUNENORI;YATSUNO HIDEO;OTSUKA WATARU
分类号 G11C11/41;G11C13/00 主分类号 G11C11/41
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