| 摘要 |
The disclosure relates to EDM (Exposure, Defocus and Mask fabrication latitude) methodology and involves a photomask, a method of producing the same, a method of exposing using the same, and a method of manufacturing a semiconductor device using the same. Correlations are found involving a large number of mask parameters, thus permitting optimisation of a lithographic process parameter taking account of mask parameters as well as other lithographic process parameters One of defocus latitude (III), mask pattern dimension (e.g. linewidth) latitude (II) and exposure latitude (I) is combined with data in predetermined ranges for the other two latitudes to determine the values of the first latitude for optimisation of a lithographic process parameter. <IMAGE> |
