| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of corresponding to an operation at a high temperature. <P>SOLUTION: The semiconductor device 100 has a semiconductor switching element 10, electrode plates 12 and 14 formed in response to terminals for the semiconductor switching element 10 respectively and thermally connected at the terminals electrically. The semiconductor device 100 further has a molding resin 30 consisting of a first resin material and sealing the semiconductor switching element 10 and the electrode plates 12 and 14, and the molding resin 32 consisting of a second resin material and sealing the molding resin 30 without being brought into contact directly with the semiconductor switching element 10 and the electrode plates 12 and 14. The molding resins 30 and 32 are arranged so that at least a part of a heat-dissipating path for the semiconductor switching element 10 is formed without going through an interface between the first resin material and the second resin material. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
