发明名称 |
METHOD FOR CRYSTALLIZING AMORPHOUS SILICON INTO POLYCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
A method for crystallizing amorphous silicon and a method for manufacturing a TFT are provided to improve the yield of products and to enhance image characteristics of a display device by obtaining uniform polycrystalline silicon by heating amorphous silicon with time-variable electric using a conductive material. An amorphous silicon layer(202) is formed on a substrate(201). A conductive material layer(208) is formed on the resultant structure. The amorphous silicon layer is transformed into a polycrystalline silicon layer by performing an inductively heating process on the conductive material. The conductive material is one selected from a group consisting of a metal, a metal alloy or semiconductor.
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申请公布号 |
KR20070025670(A) |
申请公布日期 |
2007.03.08 |
申请号 |
KR20050082090 |
申请日期 |
2005.09.05 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KIM, HONG GYU;YANG, JOONG HWAN |
分类号 |
C30B28/12 |
主分类号 |
C30B28/12 |
代理机构 |
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