发明名称 NITRIDE GALLIUM BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride gallium based compound semiconductor light-emitting element, provided with a reflection-type positive electrode having satisfactory extraction of light emission and increasing the efficiency of wavelength conversion of a phosphor. <P>SOLUTION: The semiconductor light-emitting element is provided with a nitride based gallium compound semiconductor chip and a phosphor, and converts the emission wavelength from the semiconductor chip using the phosphor. A concave groove is formed from a light-extracting surface of this semiconductor chip to a light-emitting layer. This semiconductor light-emitting element has the phosphor filled inside the concave groove. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007059418(A) 申请公布日期 2007.03.08
申请号 JP20050239321 申请日期 2005.08.22
申请人 SHOWA DENKO KK 发明人 MIKI HISAYUKI;TOMOSAWA HIDEKI
分类号 H01L33/06;H01L33/12;H01L33/22;H01L33/32;H01L33/42;H01L33/50 主分类号 H01L33/06
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