| 摘要 |
PROBLEM TO BE SOLVED: To provide a device structure for a semiconductor device containing highly reliable hetero-bipolar transistor which can realize a sufficient reduction of knee voltage (Vk) and facilitate base contact formation. SOLUTION: A hetero junction type bipolar transistor comprising at least an emitter layer, a base layer and a collector layer (and further, a sub-collector layer) or a semiconductor device having the same as a main component, wherein the emitter layer and the collector layer each has highly doped thin layers 5 and 9 doped in high concentrations, and these highly doped thin layers has higher dopant concentration than that of adjacent semiconductor layers 4, 6, 8, and 10. COPYRIGHT: (C)2007,JPO&INPIT
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