发明名称 |
Method for planarizing semiconductor structures |
摘要 |
A method for planarizing a semiconductor structure is disclosed. A semiconductor substrate having a first area in which one or more trenches are formed in a first pattern density, and a second area in which one or more trenches are formed in a second pattern density lower than the first pattern density, is provided. A first dielectric layer is formed above the semiconductor for covering the trenches in the first and second areas. A first chemical mechanical polishing is performed on the first dielectric layer using a predetermined type of slurry for reducing a thickness thereof. The first dielectric layer is then rinsed. A second chemical mechanical polishing is performed on the first dielectric layer using the predetermined type of slurry for further removing the first dielectric layer outside the trenches, thereby reducing a step height variation between surfaces of the first and second areas.
|
申请公布号 |
US2007054494(A1) |
申请公布日期 |
2007.03.08 |
申请号 |
US20050226979 |
申请日期 |
2005.09.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN YING-TSUNG;LU YUNG-CHENG;WU ZHEN-CHENG;CHEN PI-TSUNG |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|