发明名称 |
DEPOSITION OF PEROVSKITE AND OTHER COMPOUND CERAMIC FILMS FOR DIELECTRIC APPLICATIONS |
摘要 |
In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (>700 °C) anneal step that is conventionally needed to crystallize the BST layer. |
申请公布号 |
WO2007027535(A2) |
申请公布日期 |
2007.03.08 |
申请号 |
WO2006US33315 |
申请日期 |
2006.08.24 |
申请人 |
SYMMORPHIX, INC.;ZHANG, HONGMEI;DEMARAY, RICHARD, E. |
发明人 |
ZHANG, HONGMEI;DEMARAY, RICHARD, E. |
分类号 |
H01G4/06 |
主分类号 |
H01G4/06 |
代理机构 |
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地址 |
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