| 摘要 |
<p>The luminescent diode, especially a laser diode or LED, comprises a radiation-producing layer (9), to which a p-type contact layer (2) and metallizing layer (3) are applied. The contact layer consists of a semiconductor of formula: InxGa1-xN, where x = 0.03 - 0.06; or AlyInxGa1-xN, where x = 0.03 - 0.06, y = 0 - 1.0 and x + y = 0 - 1.</p> |
