发明名称 |
Semiconductor memory device with dielectric structure and method for fabricating the same |
摘要 |
A semiconductor memory device with a dielectric structure and a method for fabricating the same are provided. The dielectric structure includes: a first dielectric layer having a dielectric constant of approximately 25 or higher; a second dielectric layer including a material having a crystallization rate lower than the first dielectric layer and formed over the first dielectric layer; and a third dielectric layer including a material substantially identical to that of the first dielectric layer and formed over the second dielectric layer.
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申请公布号 |
US2007051998(A1) |
申请公布日期 |
2007.03.08 |
申请号 |
US20060387563 |
申请日期 |
2006.03.22 |
申请人 |
KIL DEOK-SIN;HONG KWON;YEOM SEUNG-JIN |
发明人 |
KIL DEOK-SIN;HONG KWON;YEOM SEUNG-JIN |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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