INTERRUPTED DEPOSITION PROCESS FOR SELECTIVE DEPOSITION OF SI-CONTAINING FILMS
摘要
<p>A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.</p>
申请公布号
WO2007027275(A2)
申请公布日期
2007.03.08
申请号
WO2006US24211
申请日期
2006.06.22
申请人
TOKYO ELECTRON LIMITED;DIP, ANTHONY;OH, SEUNGHO;LEITH, ALLEN, JOHN