COMPLIMENTARY NITRIDE TRANSISTORS VERTICAL AND COMMON DRAIN

摘要

A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts (28,46) on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening(16)of a first width in a first semiconductor layer(44) to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.