| 摘要 |
PROBLEM TO BE SOLVED: To obtain a HFET with high surge resistance by protecting the gate of the HFET using a nitride semiconductor from a surge voltage without forming a protection circuit outside and a complicated manufacturing processes. SOLUTION: A semiconductor device is provided with a field effect transistor formed on a substrate 11 and a pn junction diode. The field effect transistor has a source electrode 14, a drain electrode 15 and a gate electrode 16 formed on an element forming layer 10 comprising a plurality of nitride semiconductor layers. The diode has a p-type nitride semiconductor layer 17 that is selectively formed on the element forming layer 10 and an ohmic electrode 18, with a two-dimensional electronic gas generated by a heterojunction interface as an n-type region and the p-type nitride semiconductor layer 17 as a p-type region. The diode is electrically connected with the gate electrode 16, and forms a current path releasing the excessive current generated in the gate electrode 16. COPYRIGHT: (C)2007,JPO&INPIT
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