发明名称 Semiconductor device
摘要 In a semiconductor device, a pad metal has at least a portion located immediately under a probe region, and the portion is divided into a plurality of narrow metal layers each arranged in parallel with a traveling direction of a probe. Thus, it is possible to enhance surface flatness of the pad metal and to prevent a characteristic of a semiconductor device from deteriorating without complication in processing and increase in chip size.
申请公布号 US2007052085(A1) 申请公布日期 2007.03.08
申请号 US20060494705 申请日期 2006.07.28
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGAI NORIYUKI;SAKASHITA TOSHIHIKO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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