PROJECTION MASK, LASER MACHINING METHOD, LASER MACHINING DEVICE, AND THIN FILM TRANSISTOR ELEMENT

摘要

There are provided a projection mask, a laser machining method, and a laser machining device capable of uniformly crystallizing an object irradiated and a thin film transistor element capable of obtaining uniform electric characteristic of TFT elements formed on the object irradiated. In a plane of a projection mask (25) having a first axis and a second axis with respect to a plurality of directions in which a semiconductor film (37) irradiated is to be crystallized, there are formed a plurality of first light transmitting patterns (25a) extending in a first direction inclined by 45 degrees in one side in the circumferential direction predetermined from the second axis around the intersection of the first and the second axis and a plurality of second light transmitting pattern (25b) extending in a second direction orthogonally intersecting the first direction inclined by 45 degrees in the plane. A laser beam (31) emitted from a light source (21) is applied to the projection mask (25) so that the laser beam which has passed through the first and the second light transmitting pattern (25a, 25b) is applied to the semiconductor film (37).