| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve extraction efficiency of light without deteriorating yield by work of a substrate and without controlling a difficult condition in crystal growth. <P>SOLUTION: A semiconductor light emitting element has a structure for extracting emitted light from a substrate-side. Concave and convex work is performed on a face opposite to a face where emitted light of the element is extracted and in which an electrode of a semiconductor layer is not formed. In a manufacturing method, a metal thin film is formed on a surface of the semiconductor layer except for a region where the electrode is formed. Then, it is heated and a mask by flocculated grains of a metal is formed and it is dry-etched. Thus, a concavo-convex part is formed on a surface of the semiconductor layer where the electrode is not formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
