| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To compensate temperature variation which may be caused in an operation period of a semiconductor memory. <P>SOLUTION: A method and a device for generating word line voltage are disclosed. A word line voltage generator has a first current source, an adjustable current source, an adjustable current sink and a voltage transducer and they are connected to a current adding node. The first current source generates first current having a temperature coefficient equal to a temperature coefficient of at least one bit cell. The adjustable current source generates a second current independent of temperature variation. The adjustable current sink generates a third current independent of the temperature variation. A reference current includes (the first current + the second current) - the third current. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
