| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element by which bunker defect is prevented and a method for manufacturing it. <P>SOLUTION: The semiconductor element comprises an inter-layer insulating film 112 formed on a substrate 110, a contact plug 114 which is so formed in the inter-layer insulating film 112 that a part thereof protrudes from the inter-layer insulating film 112, an etching stopping film 118 which is so formed on the inter-layer insulating film 112 that the top part of the contact plug 114 is exposed, and a lower electrode 126 which is so formed that a part thereof contacts to the contact plug 114 while separated from the inter-layer insulating film 112 with the use of the etching stopper film 118 so as not to contact to the inter-layer insulating film 112 directly. <P>COPYRIGHT: (C)2007,JPO&INPIT |
