METHOD OF STRENGTHENING CORROSION RESISTANCE OF SEMICONDUCTOR DEVICE

摘要

A method for strengthening a corrosion resistance of a semiconductor device is provided to prevent effectively the corrosion of metal and to reduce a depositing time by forming a protection layer using a cleaning gas. A first gas containing F2 or NF3 is supplied to a chamber in a high temperature. An AlF3 layer is formed on an inner surface of the chamber by reacting the first gas on the inner surface of the chamber. The AlF3 layer has corrosion resistive characteristics. A metal film is deposited on a semiconductor substrate. Then, a cleaning process is performed on the inner surface of the chamber by using a second gas containing Cl2 or ClF2.