发明名称 |
Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line |
摘要 |
A method for activating a word line segment of a semiconductor memory selected based on a row address provided to the memory can include activating a first word line segment selected by a row address and a command type and avoiding activating a second word line segment selected by the row address. Related devices are also disclosed.
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申请公布号 |
US7187615(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20040943514 |
申请日期 |
2004.09.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK MIN-SANG;LEE YU-LIM;JANG SEONG-JIN |
分类号 |
G11C8/00;G11C11/407;G11C8/02;G11C8/08;G11C11/401;G11C11/4063 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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