发明名称 |
Plasma treatment apparatus |
摘要 |
There is provided a plasma treatment apparatus that carries out plasma treatment on an article, with which it is possible to make the plasma density uniform. A plasma treatment vessel houses a semiconductor wafer and a treatment gas is introduced into the plasma treatment vessel. A lower electrode is provided inside the plasma treatment vessel and the semiconductor wafer is placed onto the lower electrode. An upper electrode that has a plurality of holes formed therein and has a dome shape that is upwardly convex, is provided above the lower electrode in the plasma treatment vessel. A height of the upper electrode from the lower electrode becomes greater from an outside of the lower electrode to a center of the lower electrode.
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申请公布号 |
US7186315(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20030402950 |
申请日期 |
2003.04.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIMORI SHINJI;SAKAI ITSUKO |
分类号 |
H01L21/306;H05H1/46;B01J3/00;B01J19/08;C23C16/00;C23C16/509;H01J37/32;H01L21/3065 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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