| 发明名称 |
Plasma enhanced ALD of tantalum nitride and bilayer |
| 摘要 |
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
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| 申请公布号 |
US7186446(B2) |
申请公布日期 |
2007.03.06 |
| 申请号 |
US20030699226 |
申请日期 |
2003.10.31 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM HYUNGJUN;KELLOCK ANDREW J.;ROSSNAGEL STEPHEN M. |
| 分类号 |
C23C16/50;H05H1/24;B32B9/00;C23C16/08;C23C16/34;C23C16/46;C23C28/00;H01L21/205;H01L21/28;H01L21/283;H01L21/285;H01L21/314;H01L21/768;H01L23/52 |
主分类号 |
C23C16/50 |
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