发明名称 |
Semiconductor devices and methods of forming a barrier metal in semiconductor devices |
摘要 |
Semiconductor devices and methods of forming a barrier metal in semiconductor devices are disclosed. A disclosed semiconductor device includes a metal layer on a semiconductor substrate; an interlayer dielectric layer on the metal layer, a hole in the interlayer dielectric layer that exposes a portion of the metal layer; and a barrier metal on inner walls of the hole. The barrier metal is made of TaSiN having a resistivity less than or equal to about 10,000 muohm-cm.
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申请公布号 |
US7186646(B2) |
申请公布日期 |
2007.03.06 |
申请号 |
US20040925777 |
申请日期 |
2004.08.25 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE HAN-CHOON |
分类号 |
H01L21/44;H01L21/285;H01L21/768;H01L23/522 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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