| 摘要 |
A method for fabricating a semiconductor device is provided to prevent a titanium layer as a barrier metal layer from being melted in a cleaning solution during a cleaning process for removing residues generated in a bitline etch process by making the titanium layer react with NH3 so that the lateral surface of the titanium layer is transformed into a titanium nitride layer. A titanium layer(12), a titanium nitride layer(13), a wiring metal layer(14) and a hard mask layer(15) are sequentially formed on a semiconductor substrate(10) having a lower pattern. The hard mask layer, the wiring metal layer, the titanium nitride layer and the titanium layer are sequentially etched to form a metal wiring. The resultant structure is nitrified by injecting NH3 gas at a temperature of 400~800 deg.C to transform the lateral surface of the etched titanium layer into a titanium nitride layer. The wiring metal layer can be a tungsten layer or an aluminum layer.
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