发明名称 Three dimensional scaffold and method of fabricating the same
摘要 A three dimensional scaffold having a three dimensional structure is easily fabricated by employing a lithography process used in a semiconductor manufacturing process. A method of fabricating the same is also disclosed have a conformational structure. In the method of fabricating a three dimensional scaffold having the conformational structure according to the present invention, a first pattern is first formed on a substrate by using a first photoresist through a lithography process, and a temporary photoresist is coated on a whole surface of the substrate. Next, a temporary pattern exposing the upper part of the first pattern to the surface is formed by using the lithography process, and a second photoresist contacting the first pattern via the temporary pattern is coated on the whole surface of the substrate. Subsequently, the temporary pattern is removed after exposing and developing the second photoresist, and then, a second pattern connected to the first pattern is formed with the second photoresist, to thereby obtain the three dimensional scaffold. Accordingly, the present invention can readily fabricate a three dimensional scaffold having a three dimensional structure through a lithography process using a photoresist.
申请公布号 US2007048964(A1) 申请公布日期 2007.03.01
申请号 US20060509368 申请日期 2006.08.24
申请人 PARK CHIN S;KIM JOON H 发明人 PARK CHIN S.;KIM JOON H.
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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