| 摘要 |
A lithographic apparatus having a controller that sets at lest one system parameter such that the difference between the critical dimension of pattern features formed on the substrate in regions of relatively high and relatively low pattern feature density is minimised for an area on the substrate on which a patterned beam of radiation is to be projected and which re-sets the at least one system parameter between a projection of the patterned radiation beam onto two areas of the substrate.
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