发明名称 EPI wafer and method of making the same
摘要 A method including forming alignment marks in an upper surface of a semiconductor wafer; selectively depositing a mask over the alignment marks leaving portions of the upper surface exposed; depositing an epitaxial layer over the exposed portions of the upper surface; and thereafter removing the mask.
申请公布号 US2007048974(A1) 申请公布日期 2007.03.01
申请号 US20050212969 申请日期 2005.08.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHOU HSUEH-LIANG;HUANG DE-FANG
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
代理机构 代理人
主权项
地址