| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing an influence on a high frequency circuit by increasing impedance without lowering static withstand voltage and of restraining the generation of higher harmonics. <P>SOLUTION: The semiconductor device is equipped with a protective diode between an input end of a high frequency circuit and ground for protecting the high frequency circuit from electrostatic breakdown. The protective diode includes a pn junction formed by partitioning a semiconductor region of a p-type region and an n-type region stacked on a semiconductor substrate, or a semiconductor region containing a lower carrier concentration intermediate layer. The partitioned pn junction including a pn junction diode consisted of a p-type region and an n-type region both forming a discharge path and an insulated region yielded by insulating a part of the p-type region and the n-type region. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
