| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystal substrate for producing gallium-nitride (GaN) based blue light-emitting elements having high efficiency and high reliability. SOLUTION: The method of manufacturing the crystal includes: a step of growing a nitride semiconductor crystal on a substrate, wherein the substrate includes a first patterned mask in a stripe shape composed of a material having a growth suppressing effect; a step of forming a second patterned mask in a stripe shape composed of a material having a growth suppressing effect, within regions corresponding to the openings of the first patterned mask, in such a way that the width of each stripe of the second mask is smaller than the width of each opening of the first mask; and a step of further growing the nitride semiconductor crystal on the second patterned mask. COPYRIGHT: (C)2007,JPO&INPIT
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