| 摘要 |
PROBLEM TO BE SOLVED: To provide the deposition method of a semiconductor film by which a high-quality and flat semiconductor film is formed on a Ge-based/SiGe-based substrate. SOLUTION: A Ge-based substrate or an SiGe-based substrate of the semiconductor film is cleaned by a hydrochloric acid solution or a hydrochloric acid added with hydrofluoric acid, the cleaned substrate is annealed by hydrogen in a CVD deposition apparatus, and finally a deposition gas is introduced into the CVD layer apparatus. COPYRIGHT: (C)2007,JPO&INPIT
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