Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds

摘要

The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR¹)(NR²R³)₃, wherein each R¹, R², and R³ is independently hydrogen or an organic group, with the proviso that at least one of R¹, R², and R³ is a silicon-containing organic group. Such systems and methods can be useful for depositing tantalum silicon nitride layers on substrates.