Semiconductor device

摘要

A semiconductor device having high ruggedness is provided. The distance Wm₂ between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm₁ between buried regions positioned at the bottom of the same base diffusion region (Wm₁>Wm₂). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.