| 摘要 |
A method of stripping photoresist is provided. First, a first dielectric layer including a plurality of contact structures is provided. Then, a barrier layer is formed over the first dielectric layer. Thereafter, a second dielectric layer is formed over the barrier layer. Next, a patterned photoresist layer is formed over the second dielectric layer. Then, the patterned photoresist layer is used as a mask layer for patterning the second dielectric layer and the barrier layer to expose a portion of the contact structures. Furthermore, the patterned photoresist layer is removed by using an oxygen-free reducing gas. Since the reducing gas does not contain oxygen, the process can prevent oxide from forming on the contact structures, thereby reducing resistance of the contact structures.
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