| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display apparatus or the like in which degradation in characteristics caused by an opening in a gate electrode of a conventional photosensor (a bottom gate type TFT structure) or an increase in processes can be avoided and a photosensor can be formed without adding or increasing many steps to the process of a TFT for display. <P>SOLUTION: A semiconductor film 131a of a TFT 131 for a photosensor having a top gate TFT structure in a liquid crystal panel 300 is formed in the same layer as a semiconductor film 121a of a TFT for a display having a bottom gate TFT structure. A second electrode 131g2 of the photosensor 131 is formed in the same layer as a pixel electrode 160. The electrode 131g2 functions as a gate electrode for the photosensor, while an insulating film 140, 150 functions as a gate insulating film. A gate signal is supplied through the first electrode 131g1 to the electrode 131g2. Each photosensor 131 measures intensity of light in a light emitting area corresponding to a backlight, and the emission intensity in the light emitting area is controlled based on the measurement result. <P>COPYRIGHT: (C)2007,JPO&INPIT |
