SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a Schottky electrode formed thereon without causing the increase of the number of manufacturing processes, and also to provide its manufacturing method. SOLUTION: The semiconductor device comprises: a gate insulating film 16 provided on a semiconductor layer 10; a gate electrode 9 provided on the gate insulating film 16 and having at least one opening 8 between adjacent well regions 13; a source electrode 19 in ohmic contact with the source region 15; and a drain electrode 18 provided on the rear surface of the semiconductor substrate 11. An interlayer insulating film 7 is formed on the gate electrode 9 and the source electrode 19, and upper wiring 6 connected to the source electrode 19 is formed on the interlayer insulating film 7. The interlayer insulating film 7 has a contact hole 8' that reaches the surface of a drift region 12 passing through the interior of the opening 8 in the gate electrode 9, and part of the upper wiring 6 makes contact with the surface of the drift region 12 via the contact hole 8' to serve as a Schottky electrode. COPYRIGHT: (C)2007,JPO&INPIT